Modeling and simulation of the pin structure of solar cell based on polycrystalline silicon
Journal Name:
- International Journal of Innovation and Applied Studies
Key Words:
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Abstract (2. Language):
In this work we propose the modeling of rear passivation effect on the performance of the polycrystalline solar
cell. The rear passivation layers can reflect photons to the interior of the cell. Thus, prolonging their target and making easy
their absorption while decreasing the surface recombination velocities of minority carriers at the base area. The conversion
efficiency is estimated at 10.49 % for an optimal rear passivation using thin oxide /Silicon Nitride/Silicon oxide. In addition,
Front passivation by the silicon nitride of polycrystalline solar cell has been proposed. We noted a very clear improvement of
the efficiency for high Ammonia (NH3) to Silane (SiH4) gas flow ratio, the efficiency reaches 12.88% for R=10. We have also
contributed in the modelling of grain boundaries current density in polysilicon. Electrical simulation shows the influence of
grain boundaries surface recombination velocity in the optimization of the conversion efficiency. We noted that the sufficient
and optimal surface recombination velocity 104 cm/s at the emitter heavily doped gives the optimum output. Therefore, the
reduce of the grain boundaries surface recombination velocity at base region slightly doped increases the performance of
the cell, it’s about 10 cm/s. The current density at the grain boundaries is closely related to the potential barrier at grain
boundaries. Indeed, the increase in current density indicates a decrease in potential barrier. Finally, we can conclude that
Silicon nitride/ P+ N / thin oxide /Silicon Nitride/Silicon oxide multilayer structure can be preferment for photovoltaic
applications.
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