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Safsızlık Düzeyleri Arasındaki Kızılötesi Geçişler Üzerine Elektrik Alan Etkisi

Electrical Fields Effect on Infrared Transitons Between Impurity Levels

Journal Name:

  • Cumhuriyet Üniversitesi Fen Fakültesi Fen Bilimleri Dergisi

Publication Year:

  • 2015
DOI: 
http://dx.doi.org/10.17776/csj.04150

Key Words:

Keywords (Original Language):

Author NameUniversity of AuthorFaculty of Author
Abstract (2. Language): 
In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation.
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Abstract (Original Language): 
Bu çalışmada GaInNAs/GaAs tek kuantum kuyusundaki 1s, 2s ve 2p± donor safsızlık enerji düzeyleri arasındaki kızılötesi geçişler üzerine elektrik alan, azot ve indiyum konsantrasyonlarının etkisi, etkin kütle yaklaşımı çerçevesinde varyasyonel yöntem kullanılarak incelenmiştir. Sonuçlar donor safsızlık atomunun konumu ve kuyu genişliğinin bir fonksiyonu olarak sunulmuştur.
FULL TEXT (PDF): 
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  • 7
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  • Turkish

REFERENCES

References: 

[1] Erol,A. (Editör), 2008, “Dilute III-V nitride semiconductor and material systems”, Springer, Berlin, 978-3-540-74528-0.
[2] Henini, M. (Editör), 2005, “Dilute nitride semiconductor”, Elsevier, Amsterdam, Netherlands, 0-08-044502-0.
[3] Plimeni, A., 2000, “Effect of temperature on the optical properties on (InGa)(AsN)/GaAs Single quantum wells”,Appl. Phys. Lett., 77, 2870.
[4] Kondow, M., Uomi, K., Hosomi, K., ve Mozume, T., 1994, “Gas source moleculer beam epitaxy of GaNxAs1-xusing a N radical as the N source”,Jpn. J. Appl. Phys., 33, 1056.
[5] Bisping, D., Ho, S., Pucicki, D., Fischer, M., ve Forchel, A., 2008, “Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 μm”, Electron. Lett., 44, 6-7.
[6] Ma, B. S., Fan, W. J., Dang, Y. X., Cheah, W. K., ve Yoon, S. F., 2007, “Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodedector”, Appl. Phys. Lett., 91, 041905.
Safsızlık Düzeyleri Arasındaki Kızılötesi Geçişler Üzerine
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[7] Chaqmaqchee, F. A. I., Mazzucato, S., Oduncuoglu, M., Balkan, N., Sun, Y., Gunes, M., Hugues, M. ve Hopkinson, M., 2011, “GaInNAs-based Hellish-vertical cavitiy semiconductor optical amplifier for 1.3 μm operation”, Nanoscale Res. Lett., 6, 104.
[8] Royall, B., ve Balkan, N., 2009, “Simulation of dilute nitride GaInNAs doping superlattice solar cells”, IEE Proc-J, 3, 296.
[9] Sun, Y., Balkan, N., Aslan, M., Lisesivdin, S. B., Carrere, H., Arikan, M. C., ve Marie, X., 2009, “Electronic transport in n- and p-type modulation doped Ga(x)In(1-x)N(y)As(1-y)/GaAs quantum wells”, J. Phys., Condens. Matter, 21, 174210.
[10] Kaplar, R. J., Arehart, R., Ringel, S. A., Allerman, A. A., Sieg, R. M., Kurtz, S. R., 2001, “Deep levels and their impect on generation current in δn-doped InGaAsN”, J. Appl. Phys., 90, 3405.
[11] Hierro, A., Ulloa, J.-M.,Chauveau, J.-M., Trampert, A., Pinault, M. A., Tournié, E., Guzmán, A., Sánchez-Rojas,J. L., Calleja, E., 2003, “Annealing effects on thecrystal structure of GaInNAs quantum wells with large In and N content grown by moleculer beam epitaxy”, J. Appl. Phys., 94, 2319.
[12] Kasapoglu E., Duque C. A., Sakiroglu S., Sari H. ve Sokmen I., 2011, “The effects of the intense laser field on donor impuruties in a cylindirical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field”, Physica E, 43, 1427.

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