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CdZnS ve ZnO YARIİLETKEN FİLMLERİNİN YASAK ENERJİ ARALIKLARI

Journal Name:

  • Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi

Publication Year:

  • 2005

Key Words:

Keywords (Original Language):

Author NameUniversity of AuthorFaculty of Author
Abstract (2. Language): 
II–VI compound semiconductors are of great importance due to their applications in various electro-optic devices. These films have been utilized effectively in various opto-electronic devices. In this study, CdZnS and ZnO films have been prepared in different deposition conditions by the spray pyrolysis method. The optical properties of these films have been investigated. The band gap of these films is studied by absorption spectra in the wavelength range of 200–900 nm. These films have a direct band gap, which are 2.90eV for CdZnSa film, 2.97eV for CdZnSb film and, 3.11eV for ZnO film.
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Abstract (Original Language): 
II-VI bileşik yarõiletkenleri çeşitli elektro-optik aygõtlardaki uygulamalarõndan dolayõ oldukça önemlidir. Bu filmler çeşitli opto-elektronik aygõtlarda etkin olarak kullanõlmaktadõrlar. Bu çalõşmada, CdZnS ve ZnO filmleri püskürtme (spray pyrolysis) yöntemi ile farklõ koşullarda elde edilmiştir. Filmlerin optik özellikleri incelenmiştir. Bu filmlerin yasak enerji aralõklarõ, 200-900nm dalgaboyu bölgesindeki soğurma spektrumlarõ ile belirlenmiştir. Bu filmler doğrudan bant aralõğõna sahip olup, yasak enerji aralõklarõ CdZnSa filmi için 2.90eV, CdZnSb filmi için 2.97eV ve ZnO filmi için de 3.11eV olarak bulunmuştur.
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  • 1
48-54
  • Turkish

REFERENCES

References: 

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