1. Fukuta, M., “History of HEMT Transistor”
Fujitsu Quantum Devices Limited, 2002.
2. Leong, C.J., Shen, Z. and Tay, L.C., “Small-
Signal Modeling of a PHEMT up to 110 GHz
Based on The Genetic Algorithm”, Microwave
and Optical Technology Letters, Vol.29, No.6,
2001.
3. Tasic, A., Serdijn, W. A. and Long, J.R., “Adaptive
Low-Power Circuits for Wireless
Communications”, Springer, 2006.
4. Wurtz, L.T., “GaAs FET and HEMT Small-
Signal Parameter Extraction From Measured SParameters”,
IEEE Transactions on
Instrumentation and Measurement, Vol.43,
No.4, 1994.
5. Crupi, G., Schreurs, D.M.P., Caddemi, A., “On
The Small Signal Modeling of Advanced
Microwave FETs: A Comparative Study”, Int.
Journal of RF And Micr. Comp.-Aided Eng.,
pp. 417–425, May 2008.
6. Crupi, G., Xiao, D., Schreurs, D., Limiti, E.,
Caddemi, A., De Raedt, W., Germain, M.,
“Accurate Multibias Equivalent Circuit Extraction
for GaN HEMTs”, IEEE Trans Microwave
Theory Tech., Vol.54, pp. 3616–3622, 2006.
7. Jeon, M.Y., “A Technique to Extract Extrinsic
Parameters of HEMTs”, Microwave and Optical
Technology Letters, Vol.44, No.6, pp. 489–492,
2005.
8. Kameche, M., Feham, M., Meliani, M.,
Benahmet, N., Dalı, S., “Intrinsic Small-Signal
Equivalent Circuit of GaAs MESFET’s”, National
Centre of Space Techniques, Algeria Telecom
Laboratory, University of Tlemcen, Algeria,
2006.
9. Tayrani,R., Gerber, J.E., Daniel, T., Pengelly,
R.S., Rhode, U.L., “A New And Reliable Direct
Parasitic Extraction Method for MESFETs and
HEMTs” European Microwave Conf, pp.451–
453, Spain, 1993.
10. Chalermwisutkul, D.S., “Large Signal Modeling
of GaN HEMTs for UMTS Base Station Power
Amplifier Design Taking into Account Memory
Effects”, Phd Thesis, 2007.
11. Jarndal, A.H., “Large-Signal Modeling of GaN
Device for High Power Amplifier Design” Phd
Thesis, 2006.
12. Miras, A., Legros, E., “ Very High-Frequency
Small-Signal Equivalent Circuit for Short Gate
Length InP HEMT’s”, IEEE Trans. Micr.
Theory Tech., Vol. 45, pp. 1018–1026, 1997.
13. Liu, Q.Z., “An Accurate and Simple Large Signal
Model of HEMT”, Microwave Symposium
Digest, 1989.
14. Jarndal, A. and Kompa, G., “A new Small
Modeling Approach to GaN Devices, IEEE
Trans Micr. Theory Tech., Vol. 54, pp. 2949–
2953, 2006.
15. Kameche, M., Feham, M., “Simple Techniques
for Determining The Small-Signal Equivalent
Circuit of MESFET’s” Int. Journal of Infrared
and Milimeter Waves, Vol. 27, No. 5, pp. 687–
705, 2006.
16. Chen, G., Kumar, V., Schwindt, R.S., Adesida, I.,
“A Low Gate Bias Model Extraction Technique
for AlGaN/GaN HEMTs”, IEEE Trans Micr.
Theory Tech., Vol. 54, pp. 2949–2953, 2006.
17. Ahmed, A., Islam, S., Anwar, A.F.M., “A
Temperature-Dependent Nonlinear Analysis of
GaN/AlGaN HEMTs Using Volterra Series”,
IEEE Trans. On Micr. Theory and Tech., Vol.
49, No. 9, 2001.
18. Ahmed, A., Islam, S., Anwar, A.F.M.,
“Frequency and Temperature Dependent of Gain
Compression in GaN/AlGaN HEMT Amplifiers ”,
Solid-State Electronics, vol.47 pp 339-344, 2003.
19. Fager, C., “Empirical Modeling Of Microwave
Devices” Microwave Electronics Lab. Chalmers
University of Technology, 1-13, 2007.
20. Ladbrook, P.H., “ MMIC Design GaAs FET
and HEMT”, Artech House, Boston 1989.
21. Yıldırım, R., Yavuzcan, H.G., and Gökrem, L.,
“Temperature dependent analysis of HEMT's
based on gain, power and Rolletti stability”,
Technology, 12(3), 201–210, 2009.
22. Maas, S.A., “Nonlinear Microwave and RF
Circuits”, Artech House, Second Edition, pp. 26–
27, 2003.
23. Wambacg, P., Sansen, W., “Distortion Analysis
of Analog Integrated Circuits” Kluwer
Academic Publishers, 2.Ed., Boston 2001.
24. Srinidhi, E. R., Ma, R., Kompa, G., “Volterra
Series-Based Distortion Analysis for Optimization
L. Gökrem ve Ark. Dört Ton Küçük İşaret Girişli GaN HEMT Transistor ün Farklı Sıcaklıklardaki…
786 Gazi Üniv. Müh. Mim. Fak. Der. Cilt 25, No 4, 2010
of Out-of-Band Terminations in GaN HEMT
Devices” IEEE Elect. Devices Lett., 29(1): 24-
27, 2008.
25. Pedro, J.C., Carvalho, N.B., “Intermodulation
Distortion in Microwave and Wireless
Circuits”, Artech House, Boston, 2003.
26. Schetzen, M., “The Volterra and Wiener
Theories of Nonlinear Systems”, Malabar, Fla.,
R.E. Krieger Publishing Co. reprint edition with
additional material, 2006.
27. Bussgang, J.J., and Ehrman, L., “Analysis Of
Nonlinear Systems With Multiple Inputs” Proc.
IEEE, Vol:62, pp.1088-1119, Aug.1974.
28. Weiner, D.D., and Spina, J.E., “Sinusodial
Analysis and Modeling of Weakly Nonlinear
Circuits”, Van Nostrand Reinhold Comp. New
York, 1980.
29. Çelebi, F.V., Yıldırım, R., “Distortion System
Theory of the Two Tone Small signal input Laser
Diode” J. Fac. Arch. Gazi. Univ., Vol 20, No 4,
pp 373-377, 2005.
30. Yıldırım, R., “Intermodulation Distortion System
Theory of The Three-Tone Small Signal Input
Laser Diode With Non-Linear Optoelectronic
Feedback” J. Fac. Arch. Gazi Univ., Vol 2, pp
417–430, 2007.
31. Yıldırım, R., “Selection of Frequency
Components for Symmetric and Asymmetric
Communication Systems” J. Fac. Arch. Gazi
Univ., Vol 23, No 2, 329-341, 2008.
32. Schetzen, M., Yildirim, R., Çelebi F.V.,
“Intermodulation Distortion of the Single-Mode
Laser Diode” Applied Physics B-Lasers and
Optics Vol. 93 Iss. 4, pp 837–847, 2008.
33. Gökrem, L., Yüksek Elektron Hareketli
Transistör (High Electron Mobility Transistor,
HEMT) Distorsiyon Analizi, Doktora Tezi, Gazi
Üniversitesi, Fen Bilimleri Enstitüsü, 2009.
34. Yıldırım, R., Yavuzcan, H.G., Çelebi, F.V.,
Gökrem, L., “Temperature Dependent Rolletti
Stability Analysis of GaN HEMT” Journal of
Optoelectronics and Advanced Materials –
Rapid Communications, Vol. 3, No. 8, p.781 –
786, August 2009.
35. Yıldırım, R., Çelebi, F.V., Yavuzcan, H.G.,
Gökrem, L., “Asymmetric Condition Computed
From The Four Tone Input GaN HEMT”, Int.
Conf. on Application of Information and
Comm. Techn., AICT 2009, Azerbaycan.
Thank you for copying data from http://www.arastirmax.com
