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SiO2 MATRİS İÇERİSİNE İYON EKME YÖNTEMİYLE YERLEŞTİRİLMİŞ Si VE Ge NANOKRİSTALLERİNİN YAPISAL VE OPTİKSEL ÖZELLİKLERİ

STRUCTURAL AND OPTICAL PROPERTIES OF Si AND Ge NANOCRYSTALS EMBEDDED IN SiO2 MATRIX BY ION IMPLANTATION

Journal Name:

  • Sigma Mühendislik ve Fen Bilimleri Dergisi

Publication Year:

  • 2004

Key Words:

Keywords (Original Language):

Author NameUniversity of Author
Abstract (2. Language): 
It has been recently established that upon annealing at high temperatures impurity atoms implanted into SiO2 matrix precipitate and form crystal islands with nanometer size. These nanostructures are expected to have interesting electrical and optical properties which can be utilized in the production of new opto- and micro-electronic devices. In this work, properties of Ge and Si nanocrystals formed in SiO2 matrix by ion implantation followed by an annealing process were studied extensively. The formation of Ge nanocrystals was identified by Raman spectroscopy and Transmission Electron Microscopy. Ge islands with well defined spherical shapes were seen by the Transmission Electron Microscopy. The effects of process conditions such as the annealing time and temperature were studied. Evolution of Ge nanocrystal formation was clearly monitored and modeled by Raman sprectroscopy. Fourier Transform Infrared spectroscopy was employed to observe the structural variations in the SiO2 matrix during the formation of both Si and Ge nanocrystals. Si nanocrystals were studied by Photoluminescence. Two broad emission bands in the yellow-orange and near-infrared regions of the light spectrum were recorded. The intensity of these bands depends on the duration and the temperature of the annealing process. These bands are attributed to transitions in defects or chain like Si formations and nanocrystals, respectively.
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Abstract (Original Language): 
Son yıllarda, SiO2 matris içerisine ekilmiş katkı atomları yüksek sıcaklıklarda fırınlandıklarında nanometre boyutunda kristal adacıklar oluşturdukları gösterilmiştir. Bu nanoyapıların ilgi çekici elektrik ve optik özelliklere sahip olması beklenmektedir ve böylece bu yapılar opto- ve mikro-elektronik aygıt yapımında değerlendirilebileceklerdir. Bu çalışmada, SiO2 matris içinde iyon ekme ve takiben fırınlama yöntemiyle oluşturulan Ge ve Si nanokristallerinin özellikleri geniş çaplı çalışılmıştır. Ge nanokristallerinin oluşumu Raman spektroskopisi ve Geçirgenli Elektron Mikroskobu (TEM) yöntemleriyle çalışılmıştır. Ge adacıkları ve onların belirgin küresel şekilleri TEM yöntemiyle gözlenmiştir. Fırınlama süresi ve sıcaklığı gibi üretim koşullarının etkileri çalışılmıştır. Ge nanokristallerinin oluşum aşaması Raman spektroskopisi kullanılarak açık bir şekilde görüntülenmiş ve modellenmiştir. Si ve Ge nanokristallerinin oluşum aşamasında, SiO2 matrisin yapısal değişmeleri FTIR spektroskopisiyle incelenmiştir. Si nanokristalleri fotoluminesans yöntemiyle çalışılmıştır. Sarı-turuncu ve yakınkızılötesi bölgelerinde iki genişışıma tepesi kayıt edilmiştir. Bu tepelerin şiddetlerinin fırınlama süresi ve sıcaklığına bağlı olduğu gösterilmiştir. Bu tepelerden birincisi kusurlara veya zincir benzeri Si oluşumlarına, ikincisi ise nanokristallere atfedilmiştir.
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