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Delta Tip i Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı

Effective g-factor of Electrons in the Kane Type Semiconductor which has Delta Type Potential Barrier

Journal Name:

  • Süleyman Demirel Üniversitesi Fen Dergisi

Publication Year:

  • 2014

Key Words:

Keywords (Original Language):

Author NameUniversity of AuthorFaculty of Author
Abstract (2. Language): 
In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing ££, also oscillations have been observed the dependence on the equilibrium position.
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Abstract (Original Language): 
Bu çalışmada, delta tipi engel potansiyeline sahip olan Kane tipi yarıiletkenlerde elektronların etkin g-çarpanı hesaplanmıştır. Sabit dış magnetik alan z-ekseni doğrultusunda kabul edilerek, elektronların enerji spektrumları Kane modeline göre hesaplanmıştır. Etkin g-çarpanının, potansiyel engelinin şiddetine ve salınımların titreşim merkezine bağlı değişimi araştırılmıştır. Potansiyel engelinin şiddeti arttıkça elektronların etkin g-çarpanının arttığı ve salınımların denge noktasına bağlı olduğu görülmüştür.
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REFERENCES

References: 

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