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ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect

Journal Name:

  • Istanbul University Journal of Electrical & Electronics Engineering

Publication Year:

  • 2008

Key Words:

Author NameUniversity of Author
Abstract (2. Language): 
Polycrystalline silicon thin film transistors have been widely investigated as active element in liquid crystal flat panel displays. The present work consists of an analysis of experimental transfer characteristics for different active layer and a calculation of the layer resistivity in flat band regime. In order to explain the fall of this parameter in the range of 70 to 90nm, a two-dimensional simulation program is presented. It is based on the resolution of Poisson’s equation. The results show that the behaviour of this parameter as a function of film thickness can be attributed to several mechanisms, and that its decrease between 70 and 90nm is related to the simultaneous variation of the average carrier concentration and the channel mobility.
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  • 2
733-738
  • English

REFERENCES

References: 

[1] Oana Y, Kotake H, Mukai N, and Ide K:
Eectrical properties of polycrystalline silicon
Mosfet’s on glass. J Appl Phys, 22, 493,
(1983)
[2]T.I.Kamins: Hall mobility in chemically
deposited polycrystalline silicon, J.Appl
Phys.42, 4357, (1971)
[3] N.C.C.Lu, L.Gerzberg, J.D.Meindl, The
effect of film thickness on the electrical
properties of LPCVD polysilicon films. J
Electrochem Soc. 131, 897, (1984)
[4] L.Mei, M.River, Y.K.Wark, R.W.Dutton,
Grain growth mechanisms in polysilicon, J
Electrochem Soc. 129, 1791, (1982)
[5] Y.Bourezig, H.Sehil, B.Zebentout,
Z.Benamara, F.Raoult, O.Bonnaud, Solid
State Phenomena 80-81 (2001)
ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS
Study of film thickness effect
Y.Bourezig, B.Bouabdallah, F.Gaffiot
738
[6] T.I.Kamins,Solid State Electronics
15,789(1972)
[7] Warner J, Peisl M: exponential band tails
in polycrystalline semiconductor films. Phys
Rev. 31 6881, (1985)
[8] Sze SM: Physics of semiconductor
Devices. Wiley edition New York 1981
[9]Selberherr S: Analysis and Simulation of
Semiconductor Devices. Springer Verlag-
Wien 1984
[10] Levinson J, Shepherd FR, Scanlon PJ,
Westwood WD, Este G, Rider M:
Conductivity behavior in polycrystalline
semiconductor thin film transistor. J Appl
Phys. 53, 1193, (1982)

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