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Elektrik alan altında üçlü GaAs/AlxGa1-xAs kuantum kuyu-tellerinde bir hidrojenik yabancı atomun bağlanma enerjisi

THE BINDING ENERGY OF A HYDROGENIC IMPURITY IN TRIPLE GaAs/AlxGa1-xAs QUANTUM WELL-WIRES UNDER APPLIED ELECTRIC FIELD

Journal Name:

  • Trakya Üniversitesi Fen Bilimleri Dergisi

Publication Year:

  • 2004

Key Words:

Keywords (Original Language):

Author NameUniversity of AuthorFaculty of Author
Abstract (2. Language): 
The ground state binding energy of hydrogenic impurity in a triple GaAs/AlxGa1-xAs quantum wellwire (QWW) system subjected to an external electric field applied perpendicular to the along axis of the wire system is studied. The valance subband energies and wave functions in the presence of an electric field are calculated using the fourth-order Runge-Kutta method. The variational method for the binding energy of hydrogenic impurity in a triple GaAs/AlxGa1-xAs QWW has been used. Binding energy calculations were performed as function of the wire thickness, the electric field and the impurity position. Numerical results for binding energy of hydrogenic impurity in a triple GaAs/AlxGa1-xAs QWW show a sharp decrease or increase, which may be important in device applications, under suitable conditions.
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Abstract (Original Language): 
Tel sisteminin ekseni boyunca dik uygulanan bir dış elektrik alan etkisine maruz kalan üçlü GaAs/AlxGa1-xAs kuantum kuyu tel sisteminde, hidrojenik yabancı atomun taban durum bağlanma enerjisi çalışıldı. Elektrik alan etkisinde, valans subband enerjileri ve dalga fonksiyonları dördüncü derece Runge-Kutta metodu kullanılarak hesaplandı. Üçlü GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabancı atomun bağlanma enerjisi için varyasyonel metot kullanılmıştır. Bağlanma enerjisi hesapları tel kalınlığının, elektrik alanın ve yabancı atomun konumunun fonksiyonu olarak incelenmiştir. Üçlü GaAs/AlxGa1-xAs kuantum kuyu telinde hidrojenik yabancı atomun bağlanma enerjisi için nümerik sonuçlar keskin bir artma veya azalma gösterir ki bu uygun şartlar mevcut olduğunda devre elemanları uygulamalarında önemli olabilir.
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  • 2
159-165
  • English

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