Journal Name:
- International Journal of Science and Engineering Investigations
Publication Year:
- 2017
Author Name | Faculty of Author |
---|---|
- 11
- English
REFERENCES
[1] K. Tanaka, and Curr. Opin. Photoinduced processes in chalcogenide glasses, Solid State Mater. Sci. 1 (1996) 567.
[2] Zakery, S. R. Elliott, Optical properties and applications of chalcogenide glasses a review: J. of Non-Cryst. Solids 330 (2003) 1–12.
[3] A. V. Kolobov, Photo-Induced Metastability in Amorphous Semiconductors, Wiley-VCH, 2003.
[4] A. Stronski, O. Paiuk, A. Gudymenko, V. Kladko, P. Oleksenko, N. Vuichyk, M. Vlček, I. Lishchynskyy, E. Lahderanta, A. Lashkul, A. Gubanova, and T. Kryskov, Effect of doping by transitional elements on properties of chalcogenide glasses, Ceram. Int. 41 (2015) 7543–7548.
[5] K. Tanaka, and K. Shimakawa, Amorphous Chalcogenide Semiconductors and Related Materials, Springer, New York, NY, 2011.
[6] O. Mouawad, P. Vitry, C. Strutynski, J. Picot-Clémente, F. Désévédavy, G. Gadret, J.C. Jules, E. Lesniewska, and F. Smektala, Atmospheric aging and surface degradation in As253 fiber in relation with suspended-core profile, Opt. Mater. 44 (2015) 25–32.
[7] M. Nasir, and M. Zulfequar, DC conductivity and dielectric behaviour of glassy Se100-xZnx alloy. Open J. Inorg. Non Met. Mater. 2(2), 11–17 (2012).
[8] M.F. Gromboni, T.C. Kastein, R. Matos, and L.H. Mascaro, Characterization and optical properties of ZnSe thin films obtained by electrodeposition technique. ECS Trans. 43(1), (2012), 211–216.
[9] M. A. Abdel-Rahim, M. M. Hafiz, and A. Elwhab. B. Alwany, The effect of composition on structural and optical properties of ZnSe alloys. Opt. Laser Technol. 47, 88–94 (2013).
[10] M.A. Abdel-Rahim, M.M. Hafiz, and A. Elwhab.B. Alwany, Influence of annealing on the structure and optical properties of Zn40Se60 thin films. Opt. Laser Technol. 44(4), 1116–1121 (2012).
[11] R. K. Kremer, M. Cardona, R. Lauck, G. Siegle, and A.H. Romero, Vibrational and thermal properties of Zn X (X = Se, Te): density functional theory (LDA and GGA) versus experiment. Phys. Rev. B 85(3), 035208 (2012).
[12] Dohare, N. Mehta, Determination of kinetics parameters of glass transition in glassy Se and glassy Se98M2 alloys using DSC technique. Appl. Phys. A 114(2), (2014), 597–603.
[13] M. Nasir, M.A.M. Khan, M. Husain, and M. Zulfequar, Thermal properties of Se100-xZnx glassy system. Mater. Sci. Appl. 2(05), 289 (2011).
[14] Z. U. Borissova, Glassy Semiconductor, (Chapter 1). Plenum Press, New York, 1981.
[15] S.A. Khan, M. Zulfequar, and M. Husain, effect of annealing on crystallization process in amorphous Ge5Se95-xTex thin films, Physica B 324 (2002) 336.
[16] S. Min, H. Yang, and Z. Cheng, the optical and electrical gaps of Ge Se Te, J. Non-Cryst. Solids 52 (1982) 181.
[17] S.A. Fayek, M. El-Oker, and A. S. Hassanien, Optical and electrical properties of Ge10+xSe40Te50-x Mater. Chem. Phys. 70 (2001) 231.
[18] S. Fouad, The glass transition temperature and related parameters in the glassy GexSe1-x system, Physica B 293 (2001) 276-282.
[19] H. El-Zahed, M.A. Khaled, A. El-korashy, S.-M. Yousef, and M. El Oker, Dependence of optical band gap on the compositions of Se(1−x)Tex thin films, Solid State Commun. 89 (12) (1994) 1013-1016.
[20] H. El-Zahed, A. El-korashy, and M. Dongol, Optical parameter studies of as-deposited and annealed Se1− xTex films.Thin Solid Films 259 (1995) 203-211.
[21] A. El-Korashy, H. El-Zahed, H.A. Zayed, and M.A. Kenawy, Effect of composition and structure on electrical conduction of Se(100−x)Te(x) films,Solid State Commun. 95 (5) (1995) 335-339.
[22] A. Bakry, A.S. Soltan, and A. El-Korashy, Radiation effects on the optical properties of Se85-xTe15Sbx thin films, Rad. Effects defects Solids 160 (7) (2006) 275-284.
[23] H. El-Zahed, A. El-Korashy, and M.A. Abdel-Rahim, Effect of heat treatment on some of the optical parameters of Cu9Ge11Te80 films.Vacuum 68 (2002) 19-27.
[24] H. El-Zahed, and A. El-Korashy, Influence of composition on the electrical and optical properties of Ge20BixSe80−x films. Thin Solid Films 376 (2000) 236-240.
[25] A. El-Korashy, N. El-Kabany, and H. El-Zahed, Optical, electrical and the related parameters of amorphous Ge–Bi–Se thin films.Physica B 365 (2005) 55-64.
[26] R. M. Mehra, G. Kaur, A. Pundir, and P.C. Mathur, Study of Se-Te-Sb system for application to Reversible Optical Data Storage, Jpn. J. Appl. Phys. 32 (1993) 128-129.
[27] Z. Wang, C. Tu, Y. Li, and Q. Chen, The effects of Sn and Bi additions on properties and structure in Ge-Se-Te chalcogenide glass, J. Non-Cryst. Solids 191 (1995) 132-137.
[28] A. S. Soltan, M. Abu E.L-Oyoun, A.A. Abu-Sehly, and A.Y. Abdel-Latief, Thermal annealing dependence of the structural, optical and electrical properties of selenium–tellerium films, Mater. Chem.Phys. 82 (2003) 101-106.
[29] F. Abdel-Wahab, Observation of phase separation in some Se–Te–Sn chalcogenide glasses, Physica B 406 (2011) 1053-1059.
[30] Z. S. E. Mandouh, Transport properties in Se–Te–Ge glasses, J. Appl. Phys. 78 (1995) 7158.
[31] A. P. J. M. Jongenelis, J.H. Coombs, W. van Es-Spiekman, and B.A.J. Jacobs, Laser‐induced crystallization phenomena in GeTe‐based alloys. III. GeTeSe alloys for a CD compatible erasable disk, J. Appl. Phys.79 (1996) 8349.
[32] D.J. Sarrach, J.P. De Neufville, and W.L. Haworth, Studies of amorphous Ge-Se-Te alloys (I): Preparation and calorimetric observations, J. Non-Cryst. Solids 22 (1976) 245-267.
[33] E. M. Vinod, and K. S. Sangunni, The effect of Se doping on spectroscopic and electrical properties of GeTe, Thin Solid Films 550 (2014) 569-574.
[34] M. M. Hafiz, A. H. Moharram, M. A. Abdel-Rahim, and A. A. Abu-Sehly, The effect of annealing on the optical absorption and electrical conduction of amorphous As24.5Te71Cd4.5 thin films, Thin Solid Films 292 (1997) 7–13.
[35] M. A. Majeed Kan, M. Zulfequar, and M. Husain, Optical investigation of a-Se100−xBix alloys, Opt. Mater. 22 (2003) 21-29. https://doi.org/10.1016/S0925-3467(02)00234-3
[36] J.Y. Shim, S.W. Park, and H.K. Baik, Silicide formation in cobalt/amorphous silicon, amorphous CoSi and bias-induced CoSi films, Thin Solid Films 292 (1997) 31-39.
[37] S. Hasegawa, S. Yazaki, and T. Shimizu, Effects of annealing on gap states in amorphous Si filmsSolid State Commun 26(1978)407-410.
International Journal of Science and Engineering Investigations, Volume 6, Issue 70, November 2017 97
www.IJSEI.com Paper ID: 67017-14
ISSN: 2251-8843
[38] R. R. Willey, Practical Design and production of Optical Thin Films, Marcel Dekker Inc., New York, 2002.
[39] M. J. Weber, Handbook of Optical Materials, CRC press, Boca Raton, 2003.
[40] S.Y. El-Zaiat, Determination of the complex refractive index of a thick slab material from its spectral reflectance and transmittance at normal incidence. Optik, 124 (2013) 157–161.
[41] Wemple, S.H. and DiDomenico Jr., M. Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials. Physical Review B, 3(1971), pp. 1338.
[42] F. Urbach, the Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids, Physical Review, 92(5), (1953), pp. 1324.
[43] S. Venkatachalam, Y. Jeyachandran, P. Sureshkumara, A. Dhayalraj, D. Mangalaraj, K. Narayandass, and S. Velumani, Characterization of vacuum-evaporated ZnSe thin films, Materials Characterization 58 (8-9), (2007), pp. 794–799.
[44] S. Venkatachalam, Yoshinori Kanno, D. Mangalaraj, and Sa. K. Narayandass, Effect of boron ion implantation on the structural, optical and electrical properties of ZnSe thin films, Physica B 390 (2007) 71–78.
[45] Vinoth Kumar Jayaraman, Yasuhiro Matsumoto Kuwabara, Arturo Maldonado Álvarez, and María de la luz Olvera Amador, Importance of substrate rotation speed on the growth of homogeneous ZnO thin films by reactive sputtering, Materials Letters 169(2016), 1-4.
[46] Y.C. Wang, K.J. Shieh, M.S. Shyu, F.L. Shyu, J.S. Shyu, and W.C. Hwang, Diamond-like carbon film overcoats for phase-change optical recording discs, Surface and Coatings Technology 165 (2003), 140–145.
[47] S. Kumar, S. C. Kashiap and K. L. Chopra, Electron transport properties of n-type bismuth modified a-Ge20Se70 films. J. Non-Cryst. Solids 85 (1986), pp. 100-104.
[48] M. M. Malik, M. Zulfequar, A.Kumar, and M. Husain. Effect of indium impurities on the electrical properties of amorphous Ga30Se70, Journal of Physics: Condensed Matter 4(43) (1992), pp. 8331-8338
[49] V. D. Das, and Mallik, R.C. Study of Scattering of Charge Carriers in Thin Films of (Bi0.25Sb0.75)2Te3 Alloy with 2% Excess Te. Materials Research Bulletin, 37 (2002)1961-1971. 47.
[50] M. A. Abdel-Rahim, M. M. Hafiz, and A. Z. Mahmoud, influence of thermal annealing on structural and optical properties of Se70Te15Sb15 Thin Films. Chalcogenide letters 12 (2015) pp. 263-275.
[51] G. G.Rusu, M. Rusu, and M. Girtan, Optical characterization of vacuum evaporated CdZnTe thin films deposited by a multilayer method. Vacuum 81(2007), pp.1476-1479.
[52] A. A. Abu-Sehly, and M.I. Abd-Elrahman, Effect of annealing temperature on the optical and electrical properties of amorphous As45.2Te46.6In8.2 thin films. J. Phys. Chem. Sol. 63 (2002) 163-170
[53] S. K. Ishu, and P. B. Tripathia, Barman, Influence of composition on the on the optical band gap in A-Ge20Se80-XInX thin films. Chalcogenide Letters Vol. 3, No. 12, December (2006), pp. 121-12.
[54] MF. Kotkata, MS. Al-Kotb, and FA. Abdel-Wahab, doping effect of Sm on the energy gap and optical dispersion a-Se .Chalcog. Lett. 2010; 7: 145.